MRF454

MRF454
Silicon NPN Transistor
Final RF Power Output

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.
 Specified 12.5 Volt, 30 MHz
 Output Power = 80 Watts
 Minimum Gain = 12 dB
Efficiency = 50%

Absolute Maximum Ratings:
Collector-Emitter Voltage (RBE = Infinity), VCEO 25V
Collector-Base Voltage, VCBO 45V
Emitter-Base Voltage, VEBO 4,0V
Collector Current, IC 20A
Collector Power Dissipation (TC = +50°C), PD 250W
Storage Temperature Range, Tstg -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC 0,7°C/W


Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 18 - - V
Collector-Emitter Breakdown Voltage V(BR)CES IC = 50mA, VBE = 0 36 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 4 - - V
DC Forward Current Gain hFE VCE = 5V, IC = 5A 40 - 150  
Power Gain GP VCC = 12,5V, Pout = 80W, f = 30MHz 12 - - dB



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